TPS852 Просмотр технического описания (PDF) - Toshiba

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производитель

TPS852

TOSHIBA Photo-IC Silicon Epitaxial Planar

Toshiba 

ICC – EV

(typ.)

1000

100

10

1

Ta = 25°C

VCC = 3 V

using A light source

RL = 5.1 kΩ

RL = 50 kΩ

RL = 100 kΩ

0.1

1

10

100

1000

10000

Luminance EV (lx)

10000

Switching Characteristics

(non-saturating operation)

Ta = 25°C

VCC = 3 V

VOUT = 1.5 V

Using white LED

(typ.)

1000

TPS852

Relative ICC – Ta

1.40

VCC = 3 V

EV = 100 lx

Using A light source

1.20 RL = 1 kΩ

(typ.)

1.00

0.80

0.60

−40 −20

0

20

40

60

80 100

Ambient temperature Ta (°C)

10000

Switching Characteristics

(saturating operation)

Ta = 25°C

VCC = 3 V

VOUT >= 2 V

Using white LED

(typ.)

1000

100

tf

td

10

ts

tr

1

0.1

1

10

100

Load resistance RL (kΩ)

100

tf

10

td

ts

tr

1

0.1

1

10

100

Load resistance RL (kΩ)

10

2007-10-01

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