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TPS851 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TPS851
TOSHIBA Photo-IC Silicon Epitaxial Planar
Toshiba
TPS851 Datasheet PDF : 12 Pages
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TPS851
10000
I
CC
– E
V
(typ.)
1000
100
10
Ta
=
25°C
1
VCC
=
3 V
Using the A light source
RL
=
250
Ω
RL
=
1000
Ω
RL
=
5000
Ω
0.1
1
10
100
1000
10000
Luminance E
V
(lx)
Relative I
CC
– Ta
1.40
VCC
=
3 V
EV
=
100 lx
using fluorescent light
RL
=
1 k
Ω
1.20
(typ.)
1.00
0.80
0.60
−
40
−
20
0
20
40
60
80 100
Ambient temperature Ta (°C)
Switching Characteristics
(non-saturating operation)
1000
300
Ta
=
25°C
VCC
=
3 V
VOUT
=
1.5 V
Using white LED
(typ.)
100
30
tf
td
10
tr
3
ts
1
0.1
0.3
1
3
10
Load resistance R
L
(k
Ω
)
Switching Characteristics
(saturating operation)
1000
Ta
=
25°C
VCC
=
3 V
VOUT
≥
2 V
Using white LED
300
(typ.)
100
30
tf
10
td
ts
3
tr
1
0.3
0.1
0.1
0.3
1
3
10
Load resistance R
L
(k
Ω
)
10
2008-07-10
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