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TLP718 Просмотр технического описания (PDF) - Toshiba

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производитель
TLP718 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TLP718
Figure
1 Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
= 1 to 10 s
=1s
= 10 s
= 12 s
= 60 s
VINITIAL(8 kV)
V
Vpr(1424 V for TLPxxx)
(1824 V for TLPxxxF)
VIORM(890 V for TLPxxx)
(1140 V for TLPxxxF)
0
t3
tP
t4
t
t1 tini t2
tb
Figure
2 Partial discharge measurement procedure according to EN 60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
=1s
= 1.2 s
V
t3
Vpr(1670 V for TLPxxx)
(2140 V for TLPxxxF)
VIORM(890 V for TLPxxx)
(1140 V for TLPxxxF)
t
tP
tb
t4
Figure
3 Dependency of maximum safety ratings on ambient temperature
Isi
(mA)
500
400
300
200
100
0
0
1000
800
Psi
(mW)
600
400
Isi
Psi
200
0
25
50
75
100
125
150
175
Ta (°C)
© 2019
8
Toshiba Electronic Devices & Storage Corporation
2019-06-03

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