TLP629-2 Просмотр технического описания (PDF) - Toshiba

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TLP629-2

TOSHIBA Photocoupler IRED & Photo-Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

TLP629,TLP629-2,TLP629-4

Characteristic

Forward voltage

Forward current

Reverse current

Capacitance

Collector-emitter breakdown voltage

Emitter-collector breakdown voltage

Collector dark current

Capacitance collector to emitter

Symbol

Test Condition

VF

IF

IR

CT

V(BR) CEO

V(BR) ECO

ICEO

CCE

IF = 100 mA

VF = 0.7 V

VR = 5 V

V = 0 V, f = 1 MHz

IC = 0.5 mA

IE = 0.1 mA

VCE = 24 V

VCE = 24 V, Ta = 85 °C

V = 0 V, f = 1 MHz

Min Typ. Max Unit

—

1.4 1.7

V

—

2.5

20

μA

—

—

10

μA

—

50

—

pF

55

—

—

V

7

—

—

V

—

10 100 nA

—

2

50

μA

—

10

—

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Collector-emitter saturation voltage

Off-state collector current

Symbol

IC / IF

IC / IF

(high)

VCE (sat)

IC(off)

Test Condition

IF = 20 mA, VCE = 1 V

IF = 100 mA, VCE = 1 V

IC = 2.4 mA, IF = 20 mA

IC = 2.4 mA, IF = 100 mA

VF = 0.7V, VCEO = 24 V

Min Typ. Max Unit

25

—

—

%

20

—

80

—

—

0.4

V

—

—

0.4

—

1

1.0

μA

Isolation Characteristics (Ta = 25°C)

Characteristic

Capacitance input to output

Isolation resistance

Isolation voltage

Symbol

CS

RS

BVS

Test Condition

VS = 0 V, f = 1 MHz

VS = 500 V, RH ≤ 60 %

AC, 60 s

Min Typ. Max Unit

—

0.8

—

pF

5×1010 1014

—

Ω

5000 —

—

Vrms

© 2019

3

Toshiba Electronic Devices & Storage Corporation

2019-06-24

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