TLP120 Просмотр технического описания (PDF) - Toshiba

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TLP120

TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Capacitance

Collector-emitter

breakdown voltage

Emitter-collector

breakdown voltage

Collector dark current

Capacitance

(collector to emitter)

Symbol

Test Condition

VF

IF = ±10 mA

CT

V = 0, f = 1 MHz

V(BR)CEO IC = 0.5 mA

V(BR)ECO

ICEO

CCE

IE = 0.1 mA

VCE = 48 V

VCE = 48 V, Ta = 85°C

V = 0, f = 1 MHz

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Collector-emitter

saturation voltage

Off-state collector current

CTR symmetry

Symbol

Test Condition

IC / IF

IF = ±5 mA, VCE = 5 V

Rank GB

IC / IF (sat)

IF = ±1 mA, VCE = 0.4 V

Rank GB

VCE (sat)

IC = 2.4 mA, IF = ±8 mA

IC = 0.2 mA, IF = ±1 mA

Rank GB

IC(off)

IC (ratio)

VF = ± 0.7V, VCE = 48 V

IC (IF = -5mA) / IC (IF = 5mA)

Isolation Characteristics (Ta = 25°C)

Characteristic

Capacitance

(input to output)

Isolation resistance

Isolation voltage

Symbol

Test Condition

CS

VS = 0, f = 1 MHz

RS

VS = 500 V, R.H. ≤ 60%

AC, 1 minute

BVS

AC, 1 second, in oil

DC, 1 minute, in oil

TLP120

Min. Typ. Max. Unit

1.0 1.15 1.3

V

—

60

—

pF

80

—

—

V

7

—

—

V

—

10

100

nA

—

2

50

µA

—

10

—

pF

MIn. Typ. Max. Unit

50

—

600

%

100

—

600

—

60

—

%

30

—

—

—

—

0.4

—

0.2

—

V

—

—

0.4

—

1

10

µA

0.33

1

3

—

Min. Typ. Max. Unit

—

0.8

—

5×1010 1014

—

3750 —

—

— 10000 —

— 10000 —

pF

Ω

Vrms

Vdc

3

2002-09-25

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