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TLP115A Просмотр технического описания (PDF) - Toshiba

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TLP115A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TLP115A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward current
Reverse voltage
Output current
Output voltage
Supply voltage(1 minute maximum)
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature(10 sec.)
Isolation voltage(AC, 1 min., RH60%,
(Note 1)
(Note 2)
(Note 3)
Note 4)
IF
IFP
IFPT
VR
IO
VO
VCC
Po
Topr
Tstg
Tsol
BVS
20
40
1
5
25
7
7
40
40~85
55~125
260
2500
mA
mA
A
V
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.36mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width. Derate 0.72mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Input voltage, low level
Input current, high level
Supply voltage
Fan out (TTL load, each channel)
Operating temperature
VFL
IFH
VCC
N
Topr
3
0
1.0
V
6.3
8
20
mA
4.5
5
5.5
V
8
0
70
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01

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