61089B Просмотр технического описания (PDF) - Unspecified

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производитель

61089B

High Voltage Ringing SLIC Protector

Unspecified 

TISP61089B High Voltage Ringing SLIC Protector

Gated Protectors (Continued)

0V

ICB

VBATH

B (G)

+ VFRM

K

IGKS

TISP

IEB 61089B

AI6XCE

Figure 10. Transistor CB and EB Verification

Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the

protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, ID,

can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is

shorted during this test (see Figure 11).

0V

0V

ICB

V(BO)

TISP

61089B

IR

ID(I)

AK

B (G)

ID

AI6XCF

ID(I) is the internal SCR value of ID

Figure 11. Off-State Current Verification

Summary: Two tests are needed to verify the protector junctions. Maximum current values for IGKS and ID are required at the specified applied

voltage conditions.

TIP

WIRE

OVER-

CURRENT

PROTECTION

R1a

RING/TEST

PROTECTION

Th1

Th3

TEST

RELAY

S1a

RING

RELAY

SLIC

RELAY

S3a

S2a

SLIC

PROTECTOR

Th4

SLIC

R1b

RING

WIRE

Th2

TISP

3xxxF3

OR

S1b

S2b

7xxxF3

S3b

Th5

TISP

61089B

VBATH

C1

220 nF

TEST

EQUIP-

MENT

RING

GENERATOR

Figure 12. Typical Application Circuit

OCTOBER 2000 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

AI6XAJB

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