Philips Semiconductors
High efficiency DC/DC converter
Preliminary specification
TEA1206T
CHARACTERISTICS
Tj = −40 to +80 °C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Voltage levels
VO(up)
output voltage range in up mode
VO(down) output voltage range in down mode
Vi(up)
input voltage range in up mode
Vi(down) input voltage range in down mode
Vstart
start-up voltage
Vfb
feedback voltage level
Vwdw
output voltage window spread
Vuvlo
undervoltage lockout level
Current levels
U/D = LOW
2.80 −
5.50 V
U/D = HIGH
1.25 −
5.50 V
U/D = LOW
U/D = HIGH; note 1
Vstart
−
2.80 −
5.50 V
5.50 V
up mode; IL < 200 mA 1.40 1.60 1.85 V
1.19 1.24 1.29 V
PWM mode; see Fig.4 1.5
2.0
3.0
%
up mode; note 2
1.50 2.10 2.50 V
Iq
quiescent current at pin 3
V3 = 3.6 V; note 3
65
75
Ishdwn
IlimN
IlimP
shut-down current
current limit NFET
current limit PFET
−
2
up mode; note 4
0.5
−
down mode; note 4
0.5
−
ILx
maximum continuous current at pin 4
−
−
Power MOSFETS
85
µA
10
µA
5.0
A
5.0
A
1.0
A
RdsON(N) pin-to-pin resistance NFET
RdsON(P) pin-to-pin resistance PFET
Efficiency; see Fig.5
0.08 0.14 0.20 Ω
0.10 0.16 0.25 Ω
η
efficiency
Vi = 3.6 up to 4.6 V
Vi = 3.6 down to 1.8 V
Vi = 3.6 V; note 5
−
−
−
IL = 1 mA
IL = 10 mA
IL = 50 mA
−
86
−
%
−
93
−
%
−
93
−
%
IL = 100 mA
−
93
−
%
IL = 500 mA
−
93
−
%
IL = 1000 mA; pulsed −
87
−
%
load current
IL = 1 mA
−
83
−
%
IL = 10 mA
IL = 50 mA
IL = 100 mA
−
90
−
%
−
91
−
%
−
87
−
%
IL = 500 mA
−
88
−
%
IL = 1000 mA; pulsed −
82
−
%
load current
Timing
fsw
switching frequency
PWM mode
fsync
sync input frequency
tres
response time from standby to Pmax
475
560
645
kHz
9
13
20
MHz
−
25
−
µs
1999 Sep 16
9