T1620-400W Просмотр технического описания (PDF) - STMicroelectronics

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T1620-400W

SNUBBERLESS TRIAC

STMicroelectronics 

Fig.1 : Maximum power dissipation versus RMS

on-state current.

T1620W / 1630W

Fig.2 : Correlation between maximum power dissi-

pation and maximum allowable temperature

(Tamb and Tcase) for different thermal resistances

heatsink + contact.

P(W)

25

180 O

= 180o

20

= 120o

= 90o

15

= 60o

10 = 30 o

5

I T(RMS) (A)

0

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Fig.3 : RMS on-state current versus case tempera-

ture.

P (W)

25

20

15

10

Tcase (oC)

-60

Rth = 0 o C/W

1o C/W

2o C/W -70

4o C/W

-80

-90

-100

5

-110

Tamb (oC)

-120

0

0 20 40 60 80 100 120 140

Fig.4 : Thermal transient impedance junction to

case and junction to ambient versus pulse dura-

tion.

I T(RMS)(A)

20

15

= 180o

10

5

Tcase (oC)

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

Igt[Tj]

Igt[Tj=25 o C]

2.6

2.4

2.2

2.0

Ih[Tj]

Ih[Tj=25 o C]

1.8

Igt

1.6

1.4

1.2 Ih

1.0

0.8

0.6

Tj(oC)

0.4

-40 -20 0 20 40 60 80 100 120 140

Zth/Rth

1

Zth (j-c)

0.1

0.01

Zt h( j-a)

1E-3

1E-2

1E-1 1E +0

1E +1

tp (s)

1E+2 5E+2

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

ITS M(A)

200

Tj initial = 25oC

150

100

50

Number of cycles

0

1

10

100

10 00

3/5

®

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