STP10NB20 Просмотр технического описания (PDF) - STMicroelectronics
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STP10NB20 Datasheet PDF : 9 Pages
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STP10NB20/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 100 V ID = 5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 10 A VGS = 10 V
Min.
Typ .
10
15
Max.
14
20
17
24
7.5
5.5
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
8
10
20
Max.
11
14
28
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD =10 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD =10 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
10
40
Unit
A
A
1.5
V
170
ns
980
nC
11.5
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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