STH1061 Просмотр технического описания (PDF) - Semtech Electronics LTD.
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STH1061 Datasheet PDF : 3 Pages
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ST H1061
Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at VCE = 4 V, IC = 1 A
at VCE = 4 V, IC = 0.1 A
STH1061A
STH1061B
STH1061C
STH1061D
Collector Cutoff Current
at VCB = 20 V
Collector Saturation Voltage
at IC = 2 A, IB = 0.2 A
Collector Emitter Breakdown Voltage
at IC = 50 mA
Collector Base Breakdown Voltage
at IC = 5 mA
Emitter Base Breakdown Voltage
at IE = 5 mA
Base Emitter Voltage
at IC = 1 A, VCE = 4 V
Gain Bandwidth Product
at VCE = 4 V, IC = 0.5 A
Symbol
hFE
hFE
hFE
hFE
hFE
ICBO
VCE(sat)
V(BR)CEO
V(BR)CBO
V(BR)EBO
VBE
fT
Min.
35
60
100
160
35
-
-
50
50
4
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
8
Max.
Unit
70
-
120
-
200
-
320
-
-
-
0.1
mA
1
V
-
V
-
V
-
V
1.5
V
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/3/2006
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