STF202-22T1G Просмотр технического описания (PDF) - ON Semiconductor
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STF202-22T1G Datasheet PDF : 6 Pages
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STF202−22T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Device
Device VRWM
Marking (Volts)
VBR @
1 mA
(Volts)
Min Max
Max IR
@ VRWM
= 5.25 V
VBUS to
GND
(mA)
Max IR
@ VRWM
= 3.3 V
I/O Pin
(mA)
Typical Line
Capacitance
(pF)
(Notes 2, 3)
Series Resistor
RS (W) (Note 1)
Min Nom Max
STF202−22T1G S22
5.25 6.0 8.0
5.0
1.0
68
20 22 24
1. For other RS values (i.e. RS = 30 W) contact your local ON Semiconductor sales representative.
2. Measured at 25°C, VR = 0 V, f = 1 MHz, Pins 2, 3, 4 or 5 to GND with Pin 1 also grounded.
3. For other capacitance values contact your local ON Semiconductor sales representative.
Pull−up Resistor
Rup (kW)
Min Nom Max
1.35 1.5 1.65
TYPICAL CHARACTERISTICS
10
0
−10
P = −25 dBm
−20
Vdc = 0 V
−30
−40
−50
−60
−70
−80
−90
0.1
1
10
(MHz)
100
1000
Figure 1. Analog Cross−talk (D+ to D−)
50
40
30
P = −25 dBm
20
Vdc = 0 V
10
0
−10
−20
−30
−40
−50
0.1
1
10
(MHz)
100
1000
Figure 2. Insertion Loss Characteristics
22.2
22.0
RS− TARGET
21.8
21.6
21.4
21.2
21.0
−30 −20 −10
0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
Figure 3. RS versus Temperature
1540
1530
1520
1510
1500
1490
1480
1470
1460
1450
−30 −20 −10
TARGET
0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
Figure 4. Rup versus Temperature
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