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Компоненты Описание
D90N03L Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
D90N03L
N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET
STMicroelectronics
D90N03L Datasheet PDF : 16 Pages
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Electrical characteristics
2
Electrical characteristics
STD90N03L - STD90N03L-1
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V
(BR)DSS
Drain-source breakdown
voltage
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
I
GSS
V
GS(th)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on
resistance
Test conditions
I
D
= 250
µ
A, V
GS
= 0
V
DS
= 30V
V
DS
= 30V, Tc=125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
V
GS
= 5V, I
D
= 40A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±
100 nA
1
V
0.005 0.0057
Ω
0.007 0.0011
Ω
Table 4. Dynamic
Symbol
Parameter
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R
G
Gate input resistance
Test conditions
V
DS
=25V, f=1MHz,
V
GS
=0
V
DD
=15V, I
D
= 80A
V
GS
=5V
(see Figure 13)
f=1MHz Gate Bias
Bias=0 Test Signal
Level=20mV
open drain
Min. Typ. Max. Unit
2805
pF
549
pF
76
pF
22 32 nC
10
nC
7
nC
1.2
Ω
Table 5. Switching times
Symbol
Parameter
t
d(on)
t
r
Turn-on delay time
Rise time
t
d(off)
t
f
Turn-off delay time
Fall time
Test conditions
V
DD
=15V, I
D
=40A,
R
G
=4.7
Ω,
V
GS
=5V
(see Figure 12)
V
DD
=15V, I
D
=40A,
R
G
=4.7
Ω,
V
GS
=5V
(see Figure 12)
Min. Typ. Max. Unit
19
ns
135
ns
24
ns
33
ns
4/16
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