2N03L03 Просмотр технического описания (PDF) - Infineon Technologies
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2N03L03 Datasheet PDF : 8 Pages
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9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
SPP80N03S2L-03
7.5
mΩ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-60 -20
98%
typ
20 60 100 140 °C 200
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 5
pF
SPI80N03S2L-03
SPP80N03S2L-03,SPB80N03S2L-03
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2
1.25 mA
V
250 µA
1
0.5
0
-60 -20
20
60 100 °C 180
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPP80N03S2L-03
A
10 4
Ciss
Coss
10 2
10 3
Crss
10 2
0
5
10
15
20
V
30
VDS
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-05-09
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