UTRON
Preliminary Rev. 0.7
UT62L5128(I)
512K X 8 BIT LOW POWER CMOS SRAM
DATA RETENTION CHARACTERISTICS (TA = -40℃ to 85℃)
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
SYMBOL
VDR
IDR
tCDR
tR
TEST CONDITION
CE ≧ VCC-0.2V
Vcc=1.5V
CE ≧ VCC-0.2V
See Data Retention
Waveforms (below)
MIN.
1.5
-L -
- LL -
TYP.
-
1
0.5
MAX.
3.6
50
20
UNIT
V
µA
µA
0
-
-
ms
5
-
-
ms
DATA RETENTION WAVEFORM ( CE controlled)
Data Retention Mode
VCC
VCC
VDR≧1.5V
tCDR
CE
VIH
CE≧VCC-0.2V
VCC
tR
VIH
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
7
P80052