SMK0460I Просмотр технического описания (PDF) - Kodenshi Auk Co., LTD
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SMK0460I Datasheet PDF : 8 Pages
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SMK0460I
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
④
Forward transfer admittance
④
Input capacitance
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
ID=250A, VGS=0
ID=250A, VDS= VGS
VDS=600V, VGS=0V
VDS=0V, VGS=30V
VGS=10V, ID=2.0A
VDS=10V, ID=2.0A
Output capacitance
Reverse transfer capacitance
Coss
Crss
VGS=0V, VDS=25V, f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=300V, ID=4A
RG=25Ω
③④
VDS=480V, VGS=10V
ID=4A
③④
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.1
4.0
670
57
9.8
10
42
38
46
12
4
3
Max.
-
4.0
1
100
2.5
-
848
71
12.2
-
-
-
-
15
-
-
Unit
V
V
A
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min Typ Max
Continuous source current
Source current (Pulsed)
①
IS
Integral reverse diode
ISM
in the MOSFET
-
-
4
-
-
16
Forward voltage
④
VSD
VGS=0V, IS=4A
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
Is=4A
Qrr
dis/dt=100A/us
-
300
-
-
2.2
-
Unit
A
V
ns
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=25.9mH, IAS=4A, VDD=50V, RG=27Ω , Starting TJ = 25℃
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T6Q006-002
2
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