DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SIP32460DB-T2-GE1 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
SIP32460DB-T2-GE1
Vishay
Vishay Semiconductors Vishay
SIP32460DB-T2-GE1 Datasheet PDF : 14 Pages
First Prev 11 12 13 14
www.vishay.com
DETAILED DESCRIPTION
SiP32460, SiP32461, and SiP32462 are high side, slew rate
controlled, load switches. They incorporate a negative
charge pump at the gate to keep the gate to source voltage
high when turned on. This keeps the on resistance low at
lower input voltages. SiP32460 and SiP32461 are designed
with slow slew rate to minimize inrush current during turn on.
These devices have a reverse blocking circuit, when
disabled, to prevent the current from going back to the input
when the output voltage is higher than the input voltage. The
SiP32460 and SiP32462 can be used as bi-directional
switches and can be turned ON and OFF when power is at
either IN or OUT. The SiP32461 has an output pull down
resistor to discharge the output capacitance when the
device is off.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a
4.7 μF or larger capacitor for CIN is recommended in almost
all applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective
in minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 μF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the
inrush current depends on the output capacitor, the bigger
the COUT the higher the inrush current. There is no ESR or
capacitor type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 0.4 V or below to fully shut down the device
and 1 V or above to fully turn on the device. There is a
2.6 MΩ resistor connected between EN pin and GND pin.
Protection Against Reverse Voltage Condition
This device contains a reverse blocking circuit. When
disabled (VEN less than 0.4 V) this circuit keeps the output
current from flowing back to the input when the output
voltage is higher than the input voltage.
Thermal Considerations
Due to physical limitations of the layout and assembly of the
device the maximum switch current is 1.2 A as stated in the
Absolute Maximum Ratings table. However, another limiting
SiP32460, SiP32461, SiP32462
Vishay Siliconix
characteristic for the safe operating load current is the
thermal power dissipation of the package.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance,
θJ-A = 205 °C/W, and the ambient temperature, TA, which
may be expressed as:
P (max.) = TJ (max.) - TA
θJ- A
= 125 - TA
205
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 268 mW.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function
two things: the package power dissipation and the RDS(ON)
at the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(ON) at 25 °C
is 120 mΩ at VIN = 1.5 V. The RDS(ON) at 70 °C can be
extrapolated from this data using the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 2800 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 120 mΩ x (1 + 0.0028 x (70 °C - 25 °C))
= 135 mΩ
The maximum current limit is then determined by
I LOAD (max.) <
P (max.)
R DS(ON)
which in this case is 1.99 A. Under the stated input voltage
condition, if the 1.99 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
To avoid possible permanent damage to the device and
keep a reasonable design margin, it is recommended to
operate the device maximum up to 1.2 A only as listed in the
Absolute Maximum Ratings table.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67754
S14-0842-Rev. D, 28-Apr-14
12
Document Number: 67754
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]