IRFP21N60LPBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

IRFP21N60LPBF
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

100000

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

10

1

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

12.0

ID= 21A

10.0

8.0

VDS= 480V

VDS= 300V

VDS= 120V

6.0

4.0

2.0

0.0

0

20 40 60 80 100 120

QG Total Gate Charge (nC)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source

Voltage

25

20

15

10

5

0

0 100 200 300 400 500 600 700

VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS

100.00

10.00

TJ = 150°C

1.00

TJ = 25°C

0.10

VGS = 0V

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

Fig. 8 - Typical Source-Drain Diode Forward Voltage

www.vishay.com

4

Document Number: 91206

S11-0446-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: