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SI5317D-C-GM Просмотр технического описания (PDF) - Silicon Laboratories

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производитель
SI5317D-C-GM
Silabs
Silicon Laboratories Silabs
SI5317D-C-GM Datasheet PDF : 50 Pages
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Si5317
Table 5. Performance Specifications1, 2, 3, 4, 5
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Jitter Generation
fIN = fOUT = 622.08 MHz,
LVPECL output format
BW = 120 Hz
JGEN
50 kHz–80 MHz
12 kHz–20 MHz
800 Hz–80 MHz
0.32
0.42 ps rms
0.31
0.41 ps rms
0.4
0.45 ps rms
Phase Noise
CKOPN
fIN = fOUT = 622.08 MHz
LVPECL output format
100 Hz offset
1 kHz offset
10 kHz offset
–65
— dBc/Hz
–95
— dBc/Hz
–110
— dBc/Hz
100 kHz offset
–117
— dBc/Hz
1 MHz offset
–130
— dBc/Hz
Notes:
1. BWSEL [1:0] loop bandwidth settings provided in Table 9 on page 22.
2. 114.285 MHz 3rd OT crystal used as XA/XB input.
3. VDD = 2.5 V
4. TA = 85 °C
5. Test condition: fIN = 622.08 MHz, fOUT = 622.08 MHz, LVPECL clock input: 1.19 Vppd with 0.5 ns rise/fall time
(20-80%), LVPECL clock output.
12
Preliminary Rev. 0.15

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