Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
1
GND 2
2
GND 2
3
NC
INPUT
4
14
OUT ()
13
GND 2
12
OUT (+)
GND 1
11
NC
5
10
GND 1
VCC1
6
GND 1
9
ECN No.: 06027
1992 Mar 13
7
VCC 2
Fig 15. SA5211 Bonding diagram.
GND 1
8
5,"&&
15.1 Die sales disclaimer
Due to the limitations in testing high frequency and other parameters at the die level,
and the fact that die electrical characteristics may shift after packaging, die electrical
parameters are not specified and die are not guaranteed to meet electrical
characteristics (including temperature range) as noted in this data sheet which is
intended only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the wafer level, at room
temperature only (25°C), and are guaranteed to be 100% functional as a result of
electrical testing to the point of wafer sawing only. Although the most modern
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
© Philips Electronics N.V. 2001. All rights reserved.
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