S3C72H8 Просмотр технического описания (PDF) - Samsung

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S3C72H8

The S3C72H8 single-chip CMOS microcontroller has been designed for very high performance using Samsung's state-of-the-art 4-bit product development approach, SAM47

Samsung 

S3C72H8/P72H8

ELECTRICAL DATA

Table 16-4. Main System Clock Oscillator Characteristics

(TA = – 40 °C + 85 °C, VDD = 1.8 V to 5.5 V)

Oscillator

Clock

Configuration

Parameter

Ceramic

Oscillator

XIN XOUT

Oscillation frequency (1)

Test Condition

–

Min Typ Max Units

0.4

–

6.0 MHz

C1 C2

Stabilization time (2)

Stabilization occurs

–

–

when VDD is equal to

the minimum oscillator

voltage range.

Crystal

XIN XOUT Oscillation frequency (1)

–

0.4

–

Oscillator

4

ms

6 MHz

C1 C2

External

Clock

Stabilization time (2)

VDD = 4.5 V to 5.5 V

–

VDD = 2.0 V to 4.5 V

–

XIN XOUT XIN input frequency (1)

–

0.4

–

10 ms

–

30

–

6.0 MHz

RC

Oscillator

XIN XOUT

R

XIN input high and low

level width (tXH, tXL)

Frequency (1)

–

VDD = 5 V

R = 25 K, VDD = 5 V

R = 50 K, VDD = 3 V

83.3 –

0.4

–

2.0

1.0

–

ns

2.5 MHz

NOTES:

1. Oscillation frequency and XIN input frequency data are for oscillator characteristics only.

2. Stabilization time is the interval required for oscillator stabilization after a power-on occurs, or when stop mode is

terminated.

16-5

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