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S3C72B5 Просмотр технического описания (PDF) - Samsung

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S3C72B5 Datasheet PDF : 37 Pages
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ELECTRICAL DATA
S3C72B5/C72B7/C72B9/P72B9
Table 15-2. D.C. Electrical Characteristics (Concluded)
(TA = – 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)
Parameter Symbol
Conditions
Min
Typ
Max
Units
Supply
IDD1 (2) VDD = 5 V ± 10%
6.0 MHz
Current (1)
Crystal oscillator
4.19 MHz
C1 = C2 = 22 pF
3.9
8.0
mA
2.9
5.5
VDD = 3 V ± 10%
IDD2 (2)
Idle mode
VDD = 5 V ± 10%
Crystal oscillator
C1 = C2 = 22 pF
6.0 MHz
4.19 MHz
6.0 MHz
4.19 MHz
1.8
4.0
1.3
3.0
1.3
2.5
1.2
1.8
VDD = 3 V ± 10%
6.0 MHz
4.19 MHz
0.5
1.5
0.44
1.0
IDD3 (3)
IDD4 (3)
VDD = 3 V ± 10%
32 kHz crystal oscillator
Idle mode; VDD = 3 V ± 10%
32 kHz crystal oscillator
15.3
30
µA
6.4
15
IDD5
Stop mode;
VDD = 5 V ± 10%
Stop mode;
VDD = 3 V ± 10%
SCMOD =
0000B
XTin = 0V
2.5
5
0.5
3
VDD = 5 V ± 10%
VDD = 3 V ± 10%
SCMOD =
0100B
0.2
3
0.1
2
NOTES:
1. Currents in the following circuits are not included; on-chip pull-up resistors, internal LCD voltage dividing resistors,
output port drive currents.
2. Data includes power consumption for subsystem clock oscillation.
3. When the system clock control register, SCMOD, is set to 1001B, main system clock oscillation stops and the
subsystem clock is used.
4. Every values in this table is measured when the power control register (PCON) is set to "0011B".
15-4

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