DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S-8211DAB-I6T1G Просмотр технического описания (PDF) - Seiko Instruments Inc

Номер в каталоге
Компоненты Описание
производитель
S-8211DAB-I6T1G
SII
Seiko Instruments Inc SII
S-8211DAB-I6T1G Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Rev.4.5_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Table 3
Delay Time
Combination
Overcharge
Detection
Delay Time
tCU
Overdischarge
Detection
Delay Time
tDL
Discharge Overcurrent
Detection
Delay Time
tDIOV
Load Short-circuiting
Detection
Delay Time
tSHORT
(1)
1.2 s
150 ms
9 ms
300 µs
(2)
1.2 s
75 ms
9 ms
300 µs
Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office.
Table 4
Delay Time
Symbol
Selection Range
Remark
Overcharge detection delay time
tCU
143 ms 573 ms 1.2 s Select a value from the left.
Overdischarge detection delay time
tDL
38 ms 150 ms 300 ms Select a value from the left.
Discharge overcurrent detection delay time
tDIOV
4.5 ms
9 ms
18 ms Select a value from the left.
Load short-circuiting detection delay time
tSHORT
300 µs 560 µs Select a value from the left.
Remark The value surrounded by bold lines is the delay time of the standard products.
Seiko Instruments Inc.
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]