LH28F800SU Просмотр технического описания (PDF) - Sharp Electronics

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LH28F800SU

8M (512K × 16, 1M × 8) Flash Memory

Sharp Electronics 

8M (512K × 16, 1M × 8) Flash Memory

LH28F800SU

DC Characteristics

VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C

3/5 » = Pin Set High for 3.3 V Operations

SYMBOL

PARAMETER

TYP.

IIL

Input Load Current

ILO Output Leakage Current

4

ICCS VCC Standby Current

1

ICCD

VCC Deep Power-Down

Current

1

ICCR1 VCC Read Current

30

ICCR2 VCC Read Current

15

ICCW VCC Write Current

8

ICCE VCC Block Erase Current 6

ICCES

VCC Erase Suspend

Current

3

IPPS VPP Standby Current

±1

IPPD

VPP Deep Power-Down

Current

0.2

MIN.

MAX. UNITS

TEST CONDITIONS

NOTE

±1

µA VCC = VCC MAX., VIN = VCC or GND 1

±10

µA VCC = VCC MAX., VIN = VCC or GND 1

VCC = VCC MAX.,

8

µA CE»0, CE»1, RP» = VCC ±0.2 V

BYTE, WP, 3/5 » = VCC ±0.2 V or GND

±0.2 V

1,4

VCC = VCC MAX.,

4

mA CE»0, CE»1, RP» = VIH

BYTE, WP, 3/5» = VIH or VIL

5

µA RP» = GND ±0.2 V

1

VCC = VCC MAX.,

CMOS: CE »0, CE »1 = GND ±0.2 V

BYTE = GND ±0.2 V or VCC ±0.2 V

35

mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4

TTL: CE»0, CE »1 = VIL,

BYTE = VIL or VIH

Inputs = VIL or VIH

f = 8 MHz, IOUT = 0 mA

VCC = VCC MAX.,

CMOS: CE »0, CE »1 = GND ±0.2 V

BYTE = VCC ±0.2 V or GND ±0.2 V

20

mA Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3, 4

TTL: CE»0, CE »1 = VIL,

BYTE = VIH or VIL

Inputs = VIL or VIH

f = 4 MHz, IOUT = 0 mA

12 mA Word/Byte Write in Progress

1

12 mA Block Erase in Progress

1

6

mA CE»0, CE»1 = VIH

1, 2

Block Erase Suspended

±10

µA VPP ≤ VCC

1

5

µA RP» = GND ±0.2 V

1

19

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