2N6796 Просмотр технического описания (PDF) - Intersil
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2N6796 Datasheet PDF : 7 Pages
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2N6796
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
2N6796
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain
TC = 100oC . .
Current (Note 1)
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.ID
.ID
8
5
A
A
Pulsed Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
32
A
Gate to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
8
A
Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
32
A
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
25
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.20
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Diode Forward Voltage (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Safe Operating Area
BVDSS
VGS(TH)
IDSS
VDS(ON)
IGSS
rDS(ON)
VSD
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
RθJA
SOA
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 0.5mA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TC = 125oC
ID = 8A, VGS = 10V
VGS = ±20V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V, TC = 125oC
TC = 25oC, IS = 8A, VGS = 0V
VDS = 5V, ID = 5A
VDD ≅ 30V, ID = 5A, RG = 50Ω
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
Free Air Operation
VDS = 80V, ID = 310mA
VDS = 3.12V, ID = 8A
MIN TYP MAX UNITS
100
-
-
V
2
-
4
V
-
-
250
µA
-
-
1000 µA
-
-
1.56
V
-
-
±100 nA
-
0.14 0.180
Ω
-
-
0.350
Ω
0.75
-
1.5
V
3
5.5
9
S
-
-
30
ns
-
-
75
ns
-
-
40
ns
-
-
45
ns
350 600 900
pF
150 300 500
pF
50 100 150
pF
-
-
5
oC/W
-
-
175 oC/W
25
-
-
W
25
-
-
W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs
-
300
-
-
1.5
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
ns
µC
2
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