Philips Semiconductors
High-speed diode
Product specification
BAS16T
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS16T is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
very small plastic SMD SOT416
(SC-75) package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, 4 columns
3
3
1
2
n.c.
1
2
Top view
MAM393
Marking code: A6.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
Ts = 90 °C; see Fig.2
square pulse; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 90 °C
MIN.
−
−
−
−
MAX.
85
75
155
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
170
mW
−65
+150 °C
−
150
°C
1998 Jan 20
2