RK7002A Просмотр технического описания (PDF) - ROHM Semiconductor
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RK7002A Datasheet PDF : 5 Pages
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Transistors
RK7002A
10
Ta=125°C
75°C
25°C
−25°C
1.0
VGS=10V
Pulsed
0.1
0.01
0.1
1.0
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
10
Ta=125°C
75°C
25°C
−25°C
1.0
VGS=4V
Pulsed
7
6
5
4
3
150mA
2
ID=300mA
Ta=25°C
Pulsed
1
0.1
0.01
0.1
1.0
DRAIN CURRENT : I D (A)
00
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static drain-source on-state
Fig.6 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
resistance vs. gate-source voltage
2.0
VGS=10V
1
VGS=0V
Pulsed
Pulsed
1.5
1.0
ID=300mA
150mA
0.5
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
10
1 VGS=10V
0.1
0.01
Ta=25°C
Pulsed
0V
0.0
−50
−25
0
25
50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.8 Reverse drain current vs.
source-drain voltage ( Ι )
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( ΙΙ )
1
Ta=−25°C
25°C
0.1
Ta=75°C
125°C
0.01
0.001
0.001
0.01
VGS=10V
Pulsed
0.1
1
DRAIN CURRENT : ID (A)
Fig.10 Forward transfer admittance
vs. drain current
100
Ciss
10
Coss
Crss
Ta=25°C
f=1MHz
1 VGS=0V
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance
vs. drain-source voltage
1000
100
Ta=25°C
VDD=30V
VGS=10V
tf
RG=10Ω
Pulsed
td (off)
10
td (on)
tr
1
1
10
100
1000
DRAIN CURRENT : I D (A)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
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