RK7002A Просмотр технического описания (PDF) - ROHM Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RK7002A Datasheet PDF : 5 Pages
| |||
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate leakage current
IGSS
−
Drain-source breakdown voltage V (BR) DSS 60
Drain cutoff current
IDSS
−
Gate threshold voltage
VGS (th)
1
−
Drain-source on-state resistance RDS (on)∗1
−
Forward transfer admittance
l Yfs l∗1 200
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time
td (on)∗2
−
Rise time
Turn-off delay time
tr∗2
−
td (off)∗2
−
Fall time
tf∗2
−
Total gate charge
Qg∗2
−
Gate-source charge
Qgs∗2
−
Gate-drain charge
Qgd∗2
−
∗1 PW≤300µs, Duty cycle≤1%
∗2 Pulsed
Typ.
−
−
−
−
0.7
1.1
−
33
14
9
6
5
13
80
3
0.6
0.5
Max.
±10
−
1
2.5
1.0
1.5
−
−
−
−
−
−
−
−
6
−
−
Unit
Test Conditions
µA VGS=±20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=300mA, VGS=10V
Ω
ID=300mA, VGS=4V
mS VDS=10V, ID=300mA
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=150mA, VDD 30V
ns VGS=10V
ns RL=200Ω
ns RGS=10Ω
nC VDD 30V
nC VGS=10V
nC ID=200mA
RK7002A
!Packaging specifications
Type
RK7002A
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
!Electrical characteristic curves
1.2
10V
1.0
8V
6V
4V
0.8
0.6
3.5V
0.4
VGS=3V
0.2
Ta=25°C
Pulsed
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
1
VDS=10V
Pulsed
0.1
Ta=−25°C
25°C
75°C
125°C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage
vs. channel temperature
Share Link: 