FDS3890 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS3890 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 4.7A
8
6
VDS = 10V
20V
40V
4
2
0
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1500
1000
CISS
f = 1MHz
VGS = 0 V
500
CRSS
COSS
0
0
20
40
60
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135°C/W
30
TA = 25°C
20
10
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3890 Rev B(W)
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