RB717F Просмотр технического описания (PDF) - TY Semiconductor
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RB717F Datasheet PDF : 1 Pages
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Product specification
RB717F
Features
Small mold type. (UMD3)
High reliability.
Absolute Maxim um Ratings Ta = 25
P aram eter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current *
Forward current surge peak (60Hz 1cyc) *
Junction temperature
Storage temperature
* Rating of per diode
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Lim its
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
Ct
Conditions
IF = 1 mA
VR=10 V
VR=1 V , f=1MHz
Min
Typ
Max
Unit
0.37
V
1
A
2.0
pF
Marking
Marking
3E
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4008-318-123
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