RB717F(RevB) Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

RB717F
(Rev.:RevB)

Schottky barrier diode

ROHM Semiconductor 

Diodes

Schottky barrier diode

RB717F

RB717F

zApplications

Low current rectification

zFeatures

1) Small mold type. (UMD3)

2) Low VF

3) High reliability.

zConstruction

Silicon epitaxial planar

z External dimensions (Unit : mm)

r

r

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r



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r

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r

r

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㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪇

㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀

z Taping specifications (Unit : mm)

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z Land size figure (Unit : mm)

㪈㪅㪊

㪇㪅㪍㪌

㪇㪅㪏㪤㪠㪥

㪬㪤㪛㪊

zStructure 㩷

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㪉㪅㪉㪌㫧㪇㪅㪈

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zAbsolute maximum ratings (Ta=25qC)

Parameter

Reverse voltage (repetitive peak)

Reevrse voltage (DC)

Average rectifoed forward currenẗ́*1ͅ

Forward current surge peak 䋨60Hz䊶1cyc䋩䋨*1䋩

Junction temperature

Storage temperature

(*1) Rating of per diode

㪋㪅㪇㫧㪇㪅㪈

Symbol

VRM

VR

Io

IFSM

Tj

Tstg

㱢㪇㪅㪌㫧㪇㪅㪇㪌

Limits

40

40

30

200

125

-40 to +125

㪈㪅㪉㪌㫧㪇㪅㪈

Unit

V

V

mA

mA

㷄

㷄

zElectrical characteristics (Ta=25qC)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF

-

- 0.37

Reverse current

IR

-

-

1

Capacitance between terminals

Ct

-

2.0

-

Unit

Conditions

V

IF=1mA

μA

VR=10V

pF

VR=1V,f=1MHz

Rev.B

1/3

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