ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA20H8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
f=825MHz,
50 VDD=12.5V,
Pin=50mW
40
IDD
10
Pout
8
30
6
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
f=851MHz,
IDD
50 VDD=12.5V,
Pin=50mW
40
10
Pout
8
30
6
20
4
20
4
10
2
10
2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
f=870MHz,
50 VDD=12.5V,
Pin=50mW
40
IDD
10
Pout
8
30
6
20
4
10
2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
RA20H8087M
MITSUBISHI ELECTRIC
5/10
13 Jan 2006