BCR142 Просмотр технического описания (PDF) - Siemens AG

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производитель

BCR142

NPN Silicon Digital Transistor

Siemens AG 

BCR 142

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

V

IC = 100 µA, IB = 0

50

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 10 µA, IB = 0

50

-

-

Collector cutoff current

ICBO

nA

VCB = 40 V, IE = 0

-

-

100

Emitter cutoff current

IEBO

µA

VEB = 10 V, IC = 0

-

-

227

DC current gain

hFE

-

IC = 5 mA, VCE = 5 V

70

-

-

Collector-emitter saturation voltage 1) VCEsat

V

IC = 10 mA, IB = 0.5 mA

-

-

0.3

Input off voltage

Vi(off)

IC = 100 µA, VCE = 5 V

0.5

-

1.2

Input on Voltage

Vi(on)

IC = 2 mA, VCE = 0.3 V

0.8

-

2.5

Input resistor

R1

15

22

29

kΩ

Resistor ratio

R1/R2

0.42

0.47

0.52 -

AC Characteristics

Transition frequency

fT

IC = 10 mA, VCE = 5 V, f = 100 MHz

-

Collector-base capacitance

Ccb

VCB = 10 V, f = 1 MHz

-

1) Pulse test: t < 300µs; D < 2%

150

-

3

-

MHz

pF

Semiconductor Group

2

Dec-18-1996

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