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PDTC143XS Просмотр технического описания (PDF) - Philips Electronics

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PDTC143XS Datasheet PDF : 12 Pages
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Philips Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
103
hFE
102
10
006aaa178
(2) (1)
(3)
103
VCEsat
(mV)
102
006aaa179
(2) (1)
(3)
1
101
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 1. DC current gain as a function of collector
current; typical values
102
006aaa180
VI(on)
(V)
10
(2) (1)
(3)
1
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa181
10
VI(off)
(V)
(1)
1
(2)
(3)
101
101
1
10
102
IC (mA)
101
102
101
1
10
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
VCE = 5 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
PDTC143X_SER_9
Product data sheet
Rev. 09 — 26 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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