;;PK(PD,PE,KK)90F
Gate Characteristics
2
Peak Forward Gate Voltage(10V)
101
5
2
100
5
125℃
25℃ −30℃
Average
PPoewaek(r G1a0tWe )
Gate Powe(r 3W)
2
Maximum Gate Voltage that will not trigger any uni(t 0.25V)
10−1
101 2
5 102 2
5 103 2
5
Gate Curren(t mA)
On-State Voltage max
103
5
2
102
5
2
101
5
0
1
2
3
4
5
On-State Voltage(V)
Average On-State Current Vs Power Dissipation
(Single phase half wave)
200
Per one element
D.C.
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
130
120
Per one element
2
150
100
θ=180゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
2
110
100
90
80
360。
: Conduction Angle
50
360。
70
: Conduction Angle
60
θ=30゜θ=60゜θ=90゜θ=120゜θ=180゜
D.C.
0
0 20 40 60 80 100 120 140 160
Average On-State Curren(t A)
50
0
20 40 60 80 100 120 140 160
Average On-State Curren(t A)
Surge On-State Current Rating
3000
(Non-Repetitive)
Per one element
Tj=25℃ start
2500
Transient Thermal Impedance
0.5
Per one element
0.4
Junction to case
2000
1500
1000
60Hz
50Hz
500
0.3
0.2
0.1
0
100
2
5
101
2
Time(cycles)
5
102
0
10−3
10−2
10−1
100
101
102
103
104
Time t(sec)
Output Current
800
Conduction Angle 180゜
W1;Bidirectional connection B2;Two Pluse bridge connection
Id(Ar.m.s.)
Id(Aav.)
B6;Six pulse bridge connection
W3;Three phase
bidiretional connection
90
Id(Aav.)
600
400
200
W3 B6
B2
W1
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
90
100
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
90
100
110
Id(Ar.m.s.)
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
100
110
0
100 200
0
110
120
125
40
80 120
0
120
125
40
80
120
0
Output Curren(t A) Ambient Temperature(℃)
Ambient Temperature(℃)
120
125
40
80
120
Ambient Temperature(℃)