PCF5079T Просмотр технического описания (PDF) - Philips Electronics

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PCF5079T

Dual-band power amplifier controller for GSM, PCN and DCS

Philips Electronics 

Philips Semiconductors

Dual-band power amplifier controller for

GSM, PCN and DCS

Product specification

PCF5079

11 OPERATING CHARACTERISTICS

VDD = 2.5 to 5 V; Tamb = −40 to +85 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITION

MIN. TYP. MAX. UNIT

Integrator (OP4G and OP4D)

VDD

BG

PSRR

supply voltage

gain bandwidth

power supply ripple rejection

SRpos

SRneg

VO(min)

VO(max)

positive slew rate

negative slew rate

minimum output voltage

maximum output voltage

Capacitors C1, C2 and C4

M

matching ratio accuracy

between C1, C2 and C4

2.5

3.6 5.0 V

CL = 120 pF; note 1

−

f = 217 Hz; VDD = 3 V; note 1 50

VDD = 3 V; note 2

2.0

4

−

55 −

3.2 −

MHz

dB

V/µs

VDD = 3 V; note 2

Tamb = 25 °C; see Fig.7

RL = 350 Ω; see Fig.8

2.0

3.2 −

V/µs

−

−

0.2 V

0.85VDD −

−

V

−

1

−

%

Low-pass filter for DAC signal (3rd-order Bessel filter)

f3dB

td(group)

corner frequency

group delay time

see Fig.11

70

100 130 kHz

1.8

3.0 4.2 µs

Notes

1. Guaranteed by design.

2. Slew rates are measured between 10% and 90% of output voltage interval with a load of 40 pF to ground.

0.258

handbook, halfpage

TC

(mV/ K)

0.256

MGT333

0.254

0.252

0.250

2.5

3

3.5

4

4.5

5

VDD (V)

13

handbook, halfpage

IL

(mA)

11

MGT334

9

7

5

2.5

3

3.5

4

4.5

5

VDD (V)

Fig.7 Temperature coefficient of VO(min) as a

function of VDD.

2001 Nov 21

Fig.8 Minimum load current as a function of VDD.

13

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