PBSS4140T Просмотр технического описания (PDF) - Philips Electronics

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PBSS4140T

40 V, 1A NPN low VCEsat (BISS) transistor

Philips Electronics 

Philips Semiconductors

40 V, 1A

NPN low VCEsat (BISS) transistor

Product specification

PBSS4140T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Tamb ≤ 25 °C; note 2

MIN.

−

−

−

−

−

−

−

−

−65

−

−65

MAX.

40

40

5

1

2

1

300

450

+150

150

+150

UNIT

V

V

V

A

A

A

mW

mW

°C

°C

°C

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL

Rth(j-a)

PARAMETER

CONDITIONS

thermal resistance from junction in free air; note 1

to ambient

in free air; note 2

TYPICAL

417

278

UNIT

K/W

K/W

Notes

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

2004 Mar 16

3

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