PBSS4140T Просмотр технического описания (PDF) - Philips Electronics
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PBSS4140T Datasheet PDF : 9 Pages
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Philips Semiconductors
40 V, 1A
NPN low VCEsat (BISS) transistor
Product specification
PBSS4140T
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
QUICK REFERENCE DATA
SYMBOL
VCEO
ICM
RCEsat
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX. UNIT
40
V
2
A
<500 mΩ
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
handbook, halfpage
3
3
MARKING
TYPE NUMBER
PBSS4140T
MARKING CODE(1)
ZT*
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
1
Top view
1
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4140T
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Mar 16
2
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