GLT4160M04-70J3 Просмотр технического описания (PDF) - G-Link Technology
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производитель
GLT4160M04-70J3 Datasheet PDF : 22 Pages
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G-LINK
GLT4160M04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Nov. 2001 (Rev. 2.1)
AC Characteristics
Parameter
Symbol
Data Set-Up Time
tDS
Data Hold Time
tDH
Data Hold Time Referenced to RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay
RAS to CAS Precharge Time
CAS precharge time ( CAS Before RAS
counter test cycle)
Access Time from CAS Precharge
EDO Page Mode Cycle Time
tDHR
tRWD
tCWD
tAWD
tCPWD
tRPC
tCPT
tCPA
tPC
EDO Page Mode Read-Modify-Write Cycle Time tPRWC
CAS Precharge Time (EDO Page Mode)
RAS Pulse Width (EDO Page Mode Only)
RAS Hold Time from CAS precharge
Access Time from OE
OE to Data Delay Time
OE to Output Low-Z
OE to Output High-Z
WE to Data Delay
OE Command Hold Time
Data Output Hold after CAS low
RAS to Output High-Z
WE to Output High-Z
OE to CAS Hold Time
CAS Hold Time to OE
OE Precharge Time
WE Puts width (EDO mixed read write cycle)
CAS Set-Up Time for CAS -before- RAS Cycle
tCP
tRASP
tRHCP
tOEA
tOED
tOLZ
tOEZ
tWED
tOEH
tDOH
tREZ
tWEZ
tOCH
tCHO
tOEP
tWPE
tCSR
60
Min. Max.
0
10
45
79
34
49
54
5
20
35
25
56
10
60 100k
35
15
15
0
3 15
15
15
5
3 15
3 15
5
5
5
5
5
70
Min. Max.
0
15
50
94
44
59
64
5
25
40
30
71
10
70 100k
40
20
20
0
3 20
20
20
5
3 20
3 20
5
5
5
5
5
80
Min. Max.
0
15
60
99
44
64
69
5
25
45
35
81
10
80 100k
45
20
20
3
3 20
20
20
5
3 20
3 20
5
5
5
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
8
G-Link Technology
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Santa Clara, CA 95051, U.S.A.
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G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
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