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NTE2583

Silicon NPN Transistor High Speed Switching Regulator

NTE Electronics 

NTE2583

Silicon NPN Transistor

High Speed Switching Regulator

Features:

D High Breakdown Voltage and High Reliability

D Fast Switching Speed

D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

ICBO

IEBO

hFE

VCB = 400V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 1.6A

VCE = 5V, IC = 8A

Current Gain–Bandwidth Product

Output Capacitance

Collector–Emitter Saturation Voltage

fT

Cob

VCE(sat)

VCE = 5V, IC = 10mA

VCE = 10V, IC = 1.6A

VCB = 10V, f = 1MHz

IC = 6A, IB = 1.6A

Base–Emitter Saturation Voltage

VBE(sat) IC = 6A, IB = 1.6A

Min Typ Max Unit

–

– 10 µA

–

– 10 µA

20 – 50

10 –

–

10 –

–

– 20 – MHz

– 120 – pF

–

– 0.8 V

–

– 1.5 V

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