NIS5102 Просмотр технического описания (PDF) - ON Semiconductor
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NIS5102 Datasheet PDF : 14 Pages
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NIS5102
ELECTRICAL CHARACTERISTICS (continued) (VCC = 12 V, RLIMIT = 36 W, CCharge = 100 pF, TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT LIMIT
Current Limit (Short Circuit, RLIMIT = 36 W)
Current Limit (Overload, RLIMIT = 36 W) (Note 3)
ENABLE/TIMER
ILIM1
3.8
4.8
5.8
A
ILIM2
7.0
7.8
8.6
A
Enable Voltage (Turn-On)
Enable Voltage (Turn-Off)
Charging Current (Into External Capacitor)
Turn-on Delay (Time from Enable High to Isource = 100 mA)
CHARGE PUMP
VENon
2.2
-
-
V
VENoff
-
-
1.6
V
ICharge
65
77
88
mA
tdelay
-
2.2
-
ms
CCharge (Voltage on Pin 5 with Respect to Ground)
ąVCC = 18 Vdc
POWER GOOD
VCcharge
-
18
-
V
-
26
-
V
Power Good → High Z Signal when FET is Fully Enhanced
-
-
-
-
-
Low Z State Output Voltage (ISink = 2 mA)
Vpin7
-
230
300
mV
Leakage Current (Vpin7 = 12 V, High Z State)
ILeak
-
2.0
10
mA
Power Good Delay
tpwrgood
-
15
-
ms
(Time from Power FET is Fully Enhanced to Power Good FET Changing State)
TOTAL DEVICE
Bias Current (Operational, VCC = 12 V)
Bias Current (Non-operational, VCC = 7 V))
Minimum Operating Voltage
IBias
-
1.3
2.0
mA
IBias
-
400
700
mA
Vccmin
-
8.5
9.0
V
Output Current
Source Voltage
Enable/Timer
Threshold
Input
Figure 2. Timing Diagram for External Enabled Delay
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