NE713 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NE713

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

NE713

RECOMMENDED SOLDERING CONDITIONS

The following conditions (see table below) must be met when soldering this product.

Please consult with our sales offices in case other soldering process is used, or in case soldering is done under

different conditions.

<TYPES OF SURFACE MOUNT DEVICE>

For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"

(C10535E)

[NE71383B]

Soldering process

Partial heating method

Soldering conditions

Terminal temperature: 230 °C or below, Flow time: 10 seconds or below,

Exposure limit*: None

Symbol

*: Exposure limit before soldering after dry-pack package is opened.

Storage conditions: 25 °C and relative humidity at 65 % or less.

Note: Do not apply more than a single process at once, except for "Partial heating method."

PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect

transistor with shottky barrier gate.

Caution

The Great Care must be taken in dealing with the devices in this guide.

The reason is that the material of the devices is GaAs (Gallium Arsenide), which is

designated as harmful substance according to the law concerned.

Keep the law concerned and so on, especially in case of removal.

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