NCV8570 Просмотр технического описания (PDF) - ON Semiconductor
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NCV8570 Datasheet PDF : 12 Pages
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NCV8570
ELECTRICAL CHARACTERISTICS
(Vin = Vout + 0.5 V, VCE = 1.2 V, Cin = 0.1 mF, Cout = 1 mF, Cnoise = 10 nF, TA = −40C to 85C, unless otherwise specified (Note 2))
Characteristic
Test Conditions
Symbol Min
Typ
Max
Unit
REGULATOR OUTPUT
Input Voltage
Output Voltage (Note 3)
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
Vin = (Vout +0.5 V) to 5.5 V
Iout = 1 mA
Vin
2.5
−
5.5
V
Vout
1.764
−
1.836
V
2.450
−
2.550
2.695
−
2.805
2.744
−
2.856
2.940
−
3.060
3.234
−
3.366
(−2%)
(+2%)
Output Voltage (Note 3)
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
Vin = (Vout +0.5 V) to 5.5 V
Iout = 1 mA to 200 mA
Vout
1.746
−
1.854
V
2.425
−
2.575
2.6675
−
2.8325
2.716
−
2.884
2.910
−
3.090
3.201
−
3.399
(−3%)
(+3%)
Power Supply Ripple Rejection
Vin = Vout +1.0 V + 0.5 Vp−p
PSRR
dB
Iout = 1 mA to 150 mA
f = 120 Hz
−
80
−
Cnoise = 100nF
f = 1 kHz
−
80
−
f = 10 kHz
−
65
−
Line Regulation
Load Regulation
Output Noise Voltage
Vin = (Vout +0.5 V) to 5.5 V, Iout = 1 mA Regline
−0.2
−
Iout = 1 mA to 200 mA
Regload
−
12
f = 10 Hz to 100 kHz
Vn
Iout = 1 mA to 150 mA Cnoise = 100 nF
Cnoise = 10 nF
−
15
−
20
0.2
%/V
25
mV
mVrms
−
−
Output Current Limit
Output Short Circuit Current
Dropout Voltage (Note 4, 5)
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
Vout = Vout(nom) – 0.1 V
Vout = 0 V
Iout = 150 mA
ILIM
200
310
470
mA
ISC
210
320
490
mA
VDO
−
105
155
mV
−
105
155
−
105
155
−
100
150
−
100
150
Dropout Voltage (Note 6)
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
Iout = 200 mA
VDO
−
170
215
mV
−
150
205
−
150
205
−
140
200
−
130
200
GENERAL
Ground Current
Disable Current
Thermal Shutdown Threshold (Note 4)
Thermal Shutdown Hysteresis (Note 4)
CHIP ENABLE
Iout = 1 mA
Iout = 200 mA
VCE = 0 V
IGND
IDIS
TSD
TSH
−
70
90
mA
−
110
220
−
0.1
1
mA
−
150
−
C
−
20
−
C
Input Threshold
Low
High
Vth(CE)
−
−
0.4
V
1.2
−
−
Internal Pull−Down Resistance (Note 7)
TIMING
RPD(CE)
2.5
5
10
MW
Turn−on Time
Iout = 150 mA
Cnoise = 10 nF
ton
Cnoise = 100 nF
−
0.4
−
ms
−
4
−
Turn−off Time
Cnoise = 10 nF/100 nF
Iout = 1 mA
toff
Iout = 10 mA
−
800
−
ms
−
200
−
2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. Contact factory for other voltage options.
4. Guaranteed by design and characterization.
5. Characterized when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 1 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.
6. Measured when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 0.5 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.
7. Expected to disable device when CE pin is floating.
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