NCP3063B Просмотр технического описания (PDF) - ON Semiconductor

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производитель

NCP3063B

1.5 A, Step-Up/Down/Inverting Switching Regulators

ON Semiconductor 

NCP3063, NCP3063B, NCV3063

+VIN = +12 V

1

J101

C101

0.1 mF

J102

1

GND

R101

0R15

+

C102

470 mF / 25 V

L101 100 mH

U101

8 N.C. SWC 1

7 IPK SWE 2

6 VCC TCAP 3

5 COMP GND 4

NCP3063

D101

C103

2.2 nF

R103

R102

1K0 ±1%

18K0 ±1%

1N5819

C106

0.1 mF

+VOUT = +24 V / 350 mA

1

+

C105

330 mF / 50 V

J103

J104

1

GND

Figure 19. Typical Boost Application Schematic

Value of Components

Name

Value

L101

D101

100 mH, Isat > 1.5 A

1 A, 40 V Schottky Rectifier

C102

470 mF, 25 V, Low ESR

C105

330 mF, 50 V, Low ESR

C103

2.2 nF Ceramic Capacitor

Name

R101

R102

R103

C101

C106

Test Results

Test

Line Regulation

Load Regulation

Output Ripple

Efficiency

Condition

Vin = 9 V to 15 V, Io = 250 mA

Vin = 12 V, Io = 30 mA to 350 mA

Vin = 12 V, Io = 10 mA to 350 mA

Vin = 12 V, Io = 50 mA to 350 mA

Value

150 mW, 0.5 W

1.00 kW

18.00 kW

100 nF Ceramic Capacitor

100 nF Ceramic Capacitor

Results

2 mV

5 mV

≤ 350 mVpp

> 85.5%

Figure 20. Boost Demoboard Layout

90

89

88

87

86

85

84

83

82

81

80

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4

OUTPUT LOAD (Adc)

Figure 21. Efficiency vs. Output Current for the Boost

Demo Board at Vin = 12 V, Vout = 24 V, TA = 255C

http://onsemi.com

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