NCP1280DR2G Просмотр технического описания (PDF) - ON Semiconductor
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NCP1280DR2G Datasheet PDF : 18 Pages
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NCP1280
TYPICAL CHARACTERISTICS
315
600
310
500
RT = 101 kW
305
400
TJ = 25°C
DC [ 50%
300
300
295
200
290
100
285
0
−50 −25 0 25 50 75 100 125 150
50 100 150 200 250 300 350 400
TJ, JUNCTION TEMPERATURE (°C)
RT, TIMING RESISTOR (kW)
Figure 15. Oscillator Frequency versus
Junction Temperature
Figure 16. Oscillator Frequency versus
Timing Resistor
19
90
18
80
17
70
16
60
15
50
14
40
13
12
30
11
20
10
10
9
0
−50 −25 0 25 50 75 100 125 150
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Feedforward Internal Resistance
versus Junction Temperature
VEA = 3.0 V
VDCMAX = 0 V
TJ = −40°C
TJ = 125°C
75 150 225 300 375 450 525
IFF, FEEDFORWARD CURRENT (mA)
Figure 18. Maximum Duty Cycle versus
Feedforward Current
100
RFF = 1.0 MW
90
RP = OPEN, RMDP = OPEN
80
70
RP = 0 W, RMDP = OPEN
60
50
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Maximum Duty Cycle versus
Junction Temperature
7.0
70
6.5
CHARGE
65
6.0
60
5.5
55
5.0
DISCHARGE
50
4.5
45
4.0
40
3.5
35
3.0
30
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 20. Soft−Start Charge/Discharge
Currents versus Junction Temperature
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