NCP1212(2004) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NCP1212
(Rev.:2004)
(Rev.:2004)
ON Semiconductor
NCP1212 Datasheet PDF : 22 Pages
| |||
NCP1212
9
8.5
8
7.5
7
6.5
6
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Soft−Start Charge Current vs.
Junction Temperature
35
30
25
20
15
10
5
0
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Overload Timing Discharge Current
vs. Junction Temperature
5
1.2
4
1.1
VDRV = 1V
3
1
2
0.9
1
0
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. 82% Duty Cycle Selection Input
Voltage Threshold vs. Junction Temperature
0.8
0.7
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Output Sink Resistance vs.
Junction Temperature
350
300
VDRV = 5V
250
VCC = 15 V
200
80 ms Pulsed Load
120 Hz Rate
150
100
VDRV = 8V
50
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Gate Drive Source Capability vs.
Junction Temperature
400
350
VDRV = 5V
300
250
200
150
VDRV = 1V
100
VCC = 15 V
80 ms Pulsed Load
120 Hz Rate
50
−25
1
27
53
79
105
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Gate Drive Sink Capability vs.
Junction Temperature
http://onsemi.com
7
Share Link: