NAND01GR3A2CV1 Просмотр технического описания (PDF) - STMicroelectronics

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NAND01GR3A2CV1

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Table 18. DC Characteristics, 1.8V Devices

Symbol

Parameter

Test Conditions

Min

Typ

Max Unit

IDD1

IDD2

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

-

Operating

Current

Program

-

-

8

15

mA

8

15

mA

IDD3

Erase

-

-

8

15

mA

Stand-By Current (CMOS)

128Mb, 256Mb, 512Mb devices

IDD5

Stand-By Current (CMOS)

512Mb and 1Gb Dual Die devices

E=VDD-0.2,

WP=0/VDD

-

10

50

µA

-

20

100

µA

ILI

Input Leakage Current

VIN= 0 to VDDmax

-

-

±10

µA

ILO

Output Leakage Current

VOUT= 0 to VDDmax

-

-

±10

µA

VIH

Input High Voltage

-

VDD-0.4

-

VDD+0.3 V

VIL

Input Low Voltage

-

-0.3

-

0.4

V

VOH

Output High Voltage Level

IOH = -100µA

VDD-0.1

-

-

V

VOL

Output Low Voltage Level

IOL = 100µA

-

-

0.1

V

IOL (RB)

Output Low Current (RB)

VOL = 0.2V

3

4

mA

VLKO

VDD Supply Voltage (Erase and

Program lockout)

-

-

-

1.5

V

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