NAND01G-A Просмотр технического описания (PDF) - STMicroelectronics
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NAND01G-A
STMicroelectronics
NAND01G-A Datasheet PDF : 57 Pages
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
Parameters
NAND Flash
Min
Typ
Max
Page Program Time
200
500
Block Erase Time
2
3
Program/Erase Cycles (per block)
100,000
Data Retention
10
Unit
µs
ms
cycles
years
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 15., Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 15. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
1.8V devices
– 0.6
2.7
V
VIO (1)
Input or Output Voltage
3 V devices
– 0.6
4.6
V
VDD
Supply Voltage
1.8V devices
3 V devices
– 0.6
– 0.6
2.7
V
4.6
V
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
shoot to VDD + 2V for less than 20ns during transitions on I/O pins.
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