MTY55N20E Просмотр технического описания (PDF) - Motorola => Freescale
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Компоненты Описание
производитель
MTY55N20E Datasheet PDF : 8 Pages
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120
TJ = 25°C
100
80
60
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
8V
7V
9V
6V
120
VDS ≥ 10 V
100
80
60
MTY55N20E
40
5V
20
4V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
40
100°C
TJ = – 55°C
20
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
VGS = 10 V
0.04
TJ = 100°C
0.03
25°C
0.02
– 55°C
0.01
0
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.027
0.026
TJ = 25°C
0.025
VGS = 10 V
0.024
15 V
0.023
0.022
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.75
ID = 27.5 A
1.5
1.25
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1
100
0.75
0.5
10
25°C
0.25
0
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0
50
100
150
200
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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