MTD9N10D Просмотр технического описания (PDF) - ON Semiconductor
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MTD9N10D Datasheet PDF : 12 Pages
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MTD9N10E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE
PULSE
10 TC = 25°C
100 µs
10 µs
1.0
1 ms
10 ms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
40
ID = 9 A
32
24
16
8
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E-05
0.05
0.02
0.01
SINGLE PULSE
1.0E-04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
1.0E-03
1.0E-02
t, TIME (s)
1.0E-01
Figure 13. Thermal Response
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
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